SiSD4112LDN - N-Channel 100V MOSFET
SiSD4112LDN Features
* TrenchFET® Gen IV power MOSFET
* Very low RDS x Qg figure-of-merit (FOM)
* Source flip technology, enhance thermal performance
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATION
