SiSD5110DN - N-Channel 100V MOSFET
SiSD5110DN Features
* TrenchFET® Gen V power MOSFET
* Very low RDS x Qg figure-of-merit (FOM)
* Source flip technology, enhance thermal performance
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
