SiSS5812DN Datasheet - Vishay

SiSS5812DN N-Channel MOSFET

SiSS5812DN Features

* TrenchFET® Gen V power MOSFET

* Very low RDS x Qg figure-of-merit (FOM)

* Tuned for the lowest RDS x Qoss FOM

* 100 % Rg and UIS tested

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D

* S

Datasheet Details

SiSS5812DN

187.62 KB

N-channel mosfet.

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