SiZF916DT - Dual N-Channel MOSFET
SiZF916DT Features
* TrenchFET® Gen IV power MOSFET
* SkyFET® low-side MOSFET with integrated Schottky
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) m
