TSHF4410 High Speed Infrared Emitting Diode

Vishay

Description

TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero .
TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

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Datasheet Specifications

Part number: TSHF4410
Manufacturer: Vishay ↗
File Size: 117.39 KB
Datasheet: TSHF4410_Vishay.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1
* Dimensions (in mm): ∅ 3
* Peak wavelength: λp = 890 nm
* High reliability
* High radiant power
* High radiant intensity 94 8636
* Angle of half intensity: ϕ = ± 22°
* Low forward vol

Applications

* Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
* Transmission systems according to IrDA requirements and for carrier frequency based systems (e. g. ASK/FSK coded, 450 kHz or 1.3 M

TSHF4410 Distributors

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TSHF4410 High Speed Infrared Emitting Diode Vishay

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