TSHF6410 High Speed Infrared Emitting Diode

Vishay

Description

Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here) www.vishay.com TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode,.
TSHF6410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, unt.

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Datasheet Specifications

Part number: TSHF6410
Manufacturer: Vishay ↗
File Size: 120.67 KB
Datasheet: TSHF6410_Vishay.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): ∅ 5
* Peak wavelength: λp = 890 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 27°
* Low forward voltage

Applications

* Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
* Transmission systems according to IrDA requirements and for carrier frequency based systems (e. g. ASK/FSK coded, 450 kHz or 1.3 M

TSHF6410 Distributors

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TSHF6410 High Speed Infrared Emitting Diode Vishay

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