* Trench MOS Schottky technology generation 2 Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximu
V10D202C Datasheet (120.47 KB)
V10D202C
120.47 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K.
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