V10D60C Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10D60C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A eSMP® Se.

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Datasheet Specifications

Part number: V10D60C
Manufacturer: Vishay ↗
File Size: 119.42 KB
Datasheet: V10D60C-Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2 x 5.0 A 60 V 100 A 0.50 V 150 °C SMPD (TO-263AC) Circuit configuration Common cath

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V10D60C Dual Trench MOS Barrier Schottky Rectifier Vishay

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