V10DM45C Datasheet - Vishay

V10DM45C, Trench MOS Barrier Schottky Rectifier

www.vishay.com V10DM45C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 2.

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application.
PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 45 V IFSM 80 A VF at IF = 5 A (TA = 125 °C) TJ max.
0.46 V

V10DM45C-Vishay.pdf