V10WM100-M3 Datasheet - Vishay

V10WM100-M3, Trench MOS Barrier Schottky Rectifier

www.vishay.com V10WM100-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A TMBS® TO-252 (D-PAK

Features

* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Material categorization: For definitions of compli

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 100 V IFSM 180 A VF at IF = 10 A (TA = 125 °C) TJ max.
0.58 V 150 °C Package TO-252 (D-PAK) Diode variation S

V10WM100-M3-Vishay.pdf