* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V15P45S-M3 Datasheet (100.33 KB)
V15P45S-M3
100.33 KB
Smd photovoltaic solar cell protection trench mos barrier schottky rectifiers.
www.vishay.com V15P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers Ultra Low VF = .
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