V15P45S-M3 - SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers

Vishay

Datasheet Details

Part number	V15P45S-M3
Manufacturer	Vishay
File Size	100.33 KB
Description	SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers
Datasheet	V15P45S-M3-Vishay.pdf

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 V15P45S-M3 Similar Datasheet

Other Datasheets by Vishay

V15P45S - SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
V15P45 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45-M3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45HM3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P10 - Trench MOS Barrier Schottky Rectifier
V15P12 - Trench MOS Barrier Schottky Rectifier

Published: Feb 1, 2019 |