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V35DM120 Trench MOS Barrier Schottky Rectifier

V35DM120 Description

www.vishay.com V35DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5.

V35DM120 Features

* Trench MOS Schottky technology generation 2 Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximu

V35DM120 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 35 A VRRM IFSM 120 V 320 A VF at IF = 35 A (TA = 125 °C) 0.73 V TJ max

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Datasheet Details

Part number
V35DM120
Manufacturer
Vishay ↗
File Size
121.39 KB
Datasheet
V35DM120-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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