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V35PW45 Trench MOS Barrier Schottky Rectifier

V35PW45 Description

www.vishay.com V35PW45 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

V35PW45 Features

* Very low profile - typical height of 1.3 mm Available
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

V35PW45 Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 35 A VRRM 45 V IFSM 260 A VF at IF = 35 A (TA = 125 °C) 0.46 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Single MEC

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Datasheet Details

Part number
V35PW45
Manufacturer
Vishay ↗
File Size
126.81 KB
Datasheet
V35PW45-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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