* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V35PW12
114.73 KB
Trench mos barrier schottky rectifier.
www.vishay.com V35PW12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = .
📁 Related Datasheet
V35PW45 Trench MOS Barrier Schottky Rectifier (Vishay)
V35PWM12 Trench MOS Barrier Schottky Rectifier (Vishay)
V350 (V35x) RECTIFIER DIODE (Micro Quality Semiconductor)
V350ME01 OSCILLATOR (Z-Communications)
V350ME01-LF OSCILLATOR (Z-Communications)
V350ME09-LF OSCILLATOR (Z-Communications)
V350ME11-LF Voltage-Controlled Oscillator (Z-Communications)
V350ME12-LF Voltage-Controlled Oscillator (Z-Communications)
V350ME18-LF Voltage-Controlled Oscillator (Z-Communications)
V350ME19-LF Voltage-Controlled Oscillator (Z-Communications)
