V60D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

V60D100C-M3 Description

www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V a.

V60D100C-M3 Features

* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

V60D100C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling d

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V60D100C-M3 Datasheet Preview — Preview of V60D100C-M3 PDF

Datasheet Details

Part number: V60D100C-M3
Manufacturer: Vishay ↗
File Size: 106.72 KB
Datasheet: V60D100C-M3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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