V60D45C Datasheet - Vishay

V60D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

V60D45C Features

* Trench MOS Schottky technology Available

* Very low profile - typical height of 1.7 mm

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak

Datasheet Details

V60D45C

119.40 KB

Dual low-voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

V60D100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V60D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V60D100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V60D120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V60D60C Trench MOS Barrier Schottky Rectifier (Vishay)

V60DM100C Trench MOS Barrier Schottky Rectifier (Vishay)

V60DM120C Trench MOS Barrier Schottky Rectifier (Vishay)

V60DM45C Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

V60D45C Distributor