V60D60C Trench MOS Barrier Schottky Rectifier

Vishay

V60D60C Description

www.vishay.com V60D60C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0.

V60D60C Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

V60D60C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package 2 x 30 A 60 V 320 A

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Datasheet Details

Part number: V60D60C
Manufacturer: Vishay ↗
File Size: 109.39 KB
Datasheet: V60D60C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay

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