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V8P12 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V8P12 Description

www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at .

V8P12 Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

V8P12 Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-fr

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Datasheet Details

Part number
V8P12
Manufacturer
Vishay ↗
File Size
101.97 KB
Datasheet
V8P12-Vishay.pdf
Description
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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