V8P12 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V8P12
Manufacturer	Vishay
File Size	101.97 KB
Description	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V8P12-Vishay.pdf

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 PRIMA.

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Published: Apr 10, 2016 |