V8P8 Datasheet - Vishay

V8P8, Trench MOS Barrier Schottky Rectifier

www.vishay.com V8P8 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.4

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 80 V IFSM VF at IF = 8.0 A (TA = 125 °C) 140 A 0.54 V TJ max.
150 °C Package SMPC (TO-277A) Circuit configuration Single MECH

V8P8-Vishay.pdf