V8PL6-M3 Datasheet - Vishay

V8PL6-M3, Trench MOS Barrier Schottky Rectifier

www.vishay.com V8PL6-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max.
Package 8.0 A 60 V 140 A 0.42 V 150 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL D

V8PL6-M3-Vishay.pdf