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V8PL6-M3 Trench MOS Barrier Schottky Rectifier

V8PL6-M3 Description

www.vishay.com V8PL6-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

V8PL6-M3 Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

V8PL6-M3 Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package 8.0 A 60 V 140 A 0.42 V 150 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL D

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Datasheet Details

Part number
V8PL6-M3
Manufacturer
Vishay ↗
File Size
94.87 KB
Datasheet
V8PL6-M3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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