VF20100R Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V.

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Datasheet Specifications

Part number: VF20100R
Manufacturer: Vishay ↗
File Size: 135.96 KB
Datasheet: VF20100R_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 100 V 120 A 0.65 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94

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VF20100R Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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