* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VF20100S-E3 Datasheet (200.83 KB)
VF20100S-E3
200.83 KB
High voltage trench mos barrier schottky rectifier.
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ul.
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