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VF20120C Datasheet - Vishay

VF20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VF20120C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VF20120C Datasheet (80.94 KB)

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Datasheet Details

Part number:

VF20120C

Manufacturer:

Vishay ↗

File Size:

80.94 KB

Description:

Dual high-voltage trench mos barrier schottky rectifier.

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VF20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

VF20120C Distributor