VF20120S Datasheet - Vishay

VF20120S High-Voltage Trench MOS Barrier Schottky Rectifier

VF20120S Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder

Datasheet Details

VF20120S

224.25 KB

High-voltage trench mos barrier schottky rectifier.

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