VF20120S Datasheet - Vishay

VF20120S, High-Voltage Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectif.

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20120S NC A K HEATSINK 2 3 VI20120S PIN 1 PIN 2 K MECHANICAL DATA Case: TO-220AB, TO-262AA ITO-

VF20120S_Vishay.pdf