Datasheet4U Logo Datasheet4U.com

VF20120C-E3 Datasheet - Vishay

VF20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VF20120C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C max

VF20120C-E3 Datasheet (204.13 KB)

Preview of VF20120C-E3 PDF
VF20120C-E3 Datasheet Preview Page 2 VF20120C-E3 Datasheet Preview Page 3

Datasheet Details

Part number:

VF20120C-E3

Manufacturer:

Vishay ↗

File Size:

204.13 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VF20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VF20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VF20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

VF20120C-E3 Distributor