* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF30120C PIN 1 PIN 3 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
VF30120C Datasheet (226.07 KB)
VF30120C
226.07 KB
Dual high-voltage trench mos barrier schottky rectifier.
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New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky R.
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