• Part: VF30120C
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 226.07 KB
Download VF30120C Datasheet PDF
VF30120C page 2
Page 2
VF30120C page 3
Page 3

VF30120C Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
  • ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC