VI20120C Datasheet - Vishay

VI20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VI20120C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Datasheet Details

VI20120C

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Dual high-voltage trench mos barrier schottky rectifier.

VI20120C Distributor

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