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VI20120SG Datasheet - Vishay

VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier

VI20120SG Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VI20120SG Datasheet (134.93 KB)

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Datasheet Details

Part number:

VI20120SG

Manufacturer:

Vishay ↗

File Size:

134.93 KB

Description:

High-voltage trench mos barrier schottky rectifier.

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VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

VI20120SG Distributor