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VI20200C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VI20200C-E3 Description

V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

VI20200C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

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Datasheet Details

Part number
VI20200C-E3
Manufacturer
Vishay ↗
File Size
200.44 KB
Datasheet
VI20200C-E3-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
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