Part number:
VI20200G-E3
Manufacturer:
File Size:
209.15 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
Datasheet Details
Part number:
VI20200G-E3
Manufacturer:
File Size:
209.15 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
VI20200G-E3, Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200G 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20200G 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20200G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20200G 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTI
VI20200G-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
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