VI30120S Datasheet - Vishay

VI30120S, High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A .

datasheet Preview Page 1 from Datasheet4u.com

VI30120S_Vishay.pdf

VI30120S Datasheet Preview — Preview of VI30120S PDF

Datasheet Details

Part number:

VI30120S

Manufacturer:

Vishay ↗

File Size:

134.44 KB

Description:

High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please see www. visha

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 120 V 300 A 0.74 V 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL

VI30120S Distributors

📁 Related Datasheet

VI315-2 VI315-DP VI315-DPRC

📌 All Tags

VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VI30120S-like datasheet