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VIT10200C-E3 Trench MOS Barrier Schottky Rectifier

VIT10200C-E3 Description

VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V.

VIT10200C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-22

VIT10200C-E3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT10200C PIN 1 K PIN 2 HEATSINK VIT10200C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.

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Datasheet Details

Part number
VIT10200C-E3
Manufacturer
Vishay ↗
File Size
154.89 KB
Datasheet
VIT10200C-E3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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