Part number:
VIT10200C-E3
Manufacturer:
File Size:
154.89 KB
Description:
Trench mos barrier schottky rectifier.
VIT10200C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-22
VIT10200C-E3 Datasheet (154.89 KB)
Datasheet Details
VIT10200C-E3
154.89 KB
Trench mos barrier schottky rectifier.
📁 Related Datasheet
VIT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VIT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1080S Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VIT10200C-E3 Distributor