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VIT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VIT3045C Description

New Product VT3045C, VIT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 .

VIT3045C Features

* TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Compliant to RoHS Directive 2002/95/EC and in ac

VIT3045C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 45 V 200 A 0.39 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound m

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Datasheet Details

Part number
VIT3045C
Manufacturer
Vishay ↗
File Size
201.95 KB
Datasheet
VIT3045C_Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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