Part number:
VIT3060C-E3
Manufacturer:
File Size:
190.18 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
VIT3060C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VIT3060C-E3 Datasheet (190.18 KB)
Datasheet Details
VIT3060C-E3
190.18 KB
Dual high voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
VIT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060C Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060C-E3 Distributor