Datasheet Details
Part number:
VIT3060G
Manufacturer:
File Size:
143.27 KB
Description:
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Not recommended for PCB bottom side wave mounting
* Solder
VIT3060G, Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com VT3060G, VFT3060G, VBT3060G, VIT3060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSINK VIT3060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package 2 x 15 A 60 V 150 A 0.61 V 150 °C
VIT3060G Distributor
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