VS-GT300FD060N Datasheet, Stage, Vishay

VS-GT300FD060N Features

• Stage
• Trench plus Field Stop IGBT technology
• FRED Pt® antiparallel and clamping diodes
• Short circuit capability
• Speed 4 kHz to 30 kHz
• Low str

PDF File Details

Part number:

VS-GT300FD060N

Manufacturer:

Vishay ↗

File Size:

364.55kb

Download:

📄 Datasheet

Description:

Diap low profile 3-levels half-bridge inverter stage.

TAGS

VS-GT300FD060N

Vishay

📁 Related Datasheet

VS-GT300YH120N - DIAP Trench IGBT (Vishay)
.vishay. VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERIS.

VS-GT100LA120UX - IGBT (Vishay)
.vishay. VS-GT100LA120UX Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A SOT-227 PRODUCT SUMMARY VCES IC DC VCE(o.

VS-GT100NA120UX - IGBT (Vishay)
.vishay. VS-GT100NA120UX Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A SOT-227 PRODUCT SUMMARY VCES IC DC VCE(.

VS-GT100TP120N - Half Bridge IGBT (Vishay)
.vishay. VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C V.

VS-GT100TP60N - Half Bridge IGBT (Vishay)
.vishay. VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = .

VS-GT120DA65U - IGBT (Vishay)
.vishay. VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-227 PRIMARY CHARACTERISTICS .

VS-GT140DA60U - IGBT (Vishay)
.vishay. VS-GT140DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A SOT-227 PRIMARY CHARACTERISTICS VCES IC.

VS-GT175DA120U - IGBT (Vishay)
.vishay. VS-GT175DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A SOT-227 PRODUCT SUMMARY VCES IC(DC) VC.

VS-GT180DA120U - IGBT (Vishay)
.vishay. VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES I.

VS-GT200TP065N - Half Bridge - Trench IGBT (Vishay)
.vishay. VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at.