VS-GT300YH120N Datasheet (Vishay)

VS-GT300YH120N, DIAP Trench IGBT

www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERISTICS IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 °C 1.99 V IF(DC) at 80 °C 300 A IGBT AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.6

VS-GT300YH120N Features

* 1200 V IGBT trench and field stop technology with positive temperature coefficient

* Low switching losses

* Maximum junction temperature 175 °C

* 10 μs short circuit capability

* Low inductance case

* HEXFRED® antiparallel and series diodes with soft