* 1200 V IGBT trench and field stop technology with positive temperature coefficient
* Low switching losses
* Maximum junction temperature 175 °C
* 10 μs short circuit capability
* Low inductance case
* HEXFRED® antiparallel and series diodes with soft
VS-GT300YH120N Datasheet (190.58 KB)
VS-GT300YH120N
190.58 KB
Diap trench igbt.
www.vishay.com
VS-GT300YH120N
Vishay Semiconductors
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
PRIMARY CHARACTERIS.
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