VS-GT80DA120U Datasheet - Vishay

VS-GT80DA120U, IGBT

www.vishay.com VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 12

Features

* Trench IGBT technology
* Positive VCE(on) temperature coefficient
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® low Qrr, low switching energy
* TJ maximum = 150 °C
* Fully isolated package
* Very low internal inductance (

VS-GT80DA120U-Vishay.pdf

VS-GT80DA120U Datasheet Preview — Preview of VS-GT80DA120U PDF

Datasheet Details

Part number:

VS-GT80DA120U

Manufacturer:

Vishay ↗

File Size:

182.11 KB

Description:

Igbt.

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VS-GT80DA120U IGBT Vishay

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