VS-GT80DA60U Datasheet - Vishay

VS-GT80DA60U, IGBT

www.vishay.com VS-GT80DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A SOT-227 PRIMARY CHARACTERISTICS VC

Features

* High speed trench gate field-stop IGBT positive temperature coefficient
* TJ maximum = 175 °C
* FRED Pt® anti-parallel diodes with ultrasoft reverse recovery
* Fully isolated package
* Very low internal inductance ( 5 nH typical)
* Industry standard

VS-GT80DA60U-Vishay.pdf