VS-MBRB2035CT-M3 Datasheet - Vishay

VS-MBRB2035CT-M3 High Performance Schottky Rectifier

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse ba.

www.vishay.com VS-MBRB20..CT-M3, VS-MBR20..CT-1-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-MBRB20..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR20..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR 2 x 10 A 35 V, 45 V VF at IF IRM max. TJ max. 0.72 V 15 mA at 125 °C 150 °C EAS Package 8 mJ D2PAK (TO-263AB), TO-262AA Circuit configuration C.

VS-MBRB2035CT-M3 Features

* 150 °C TJ operation

* Center tap D2PAK (TO-263AB) and TO-262AA packages

* Low forward voltage drop

* High frequency operation

* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

* Guard ring fo

VS-MBRB2035CT-M3 Datasheet (227.97 KB)