VSB2200S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier .

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Datasheet Specifications

Part number: VSB2200S
Manufacturer: Vishay ↗
File Size: 145.05 KB
Datasheet: VSB2200S_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology TMBS®
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41)
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications

* For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Pe

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VSB2200S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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