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VSB3200 High-Voltage Trench MOS Barrier Schottky Rectifier

VSB3200 Description

www.DataSheet.co.kr New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier .

VSB3200 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TMBS® DO-201AD

VSB3200 Applications

* For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 3.0 A 200 V 90 A 0.63 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max. MECHANICAL DATA Case: DO-201AD Molding compound meets

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Datasheet Details

Part number
VSB3200
Manufacturer
Vishay ↗
File Size
130.72 KB
Datasheet
VSB3200_Vishay.pdf
Description
High-Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VSB3200-like datasheet