VSB3200

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TMBS® DO-201AD

VSB3200

130.72 KB

High-voltage trench mos barrier schottky rectifier.

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