VSB3200S

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation DO-204AC (DO-15)

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY C

VSB3200S

145.30 KB

High-voltage trench mos barrier schottky rectifier.

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