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VT3080C Dual Trench MOS Barrier Schottky Rectifier

VT3080C Description

www.DataSheet.co.kr New Product VT3080C, VIT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at .

VT3080C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT3080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT3080C PIN 1 PIN 3 2 3 1

VT3080C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reserve battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 80 V 150 A 0.65 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound m

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Datasheet Details

Part number
VT3080C
Manufacturer
Vishay ↗
File Size
188.51 KB
Datasheet
VT3080C_Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT3080C-like datasheet