Datasheet4U Logo Datasheet4U.com

VT3045BP Trench MOS Barrier Schottky Rectifier

VT3045BP Description

VT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V.

VT3045BP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU
* Halogen-free according to IEC 61249-2-21 definition 2 1

VT3045BP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 1 PIN 2 CASE MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) 30 A 45 V 200 A 0.51 V 150 °C 200 °C Case:

📥 Download Datasheet

Preview of VT3045BP PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VT3045BP
Manufacturer
Vishay ↗
File Size
171.27 KB
Datasheet
VT3045BP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VT300 - Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
  • VT300CT - Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
  • VT3-801F - SMD VC-TCXO (QuartzCom)
  • VT3-801FL - SMD VC-TCXO (QuartzCom)
  • VT3-801FM - SMD VC-TCXO (QuartzCom)
  • VT3-801FS - SMD VC-TCXO (QuartzCom)
  • VT355 - CSP-15 Type C (Volterra)
  • VT361716 - 512K X 2 BANKS X 16 BITS SDRAM (Kreton)

📌 All Tags

Trench MOS Barrier Schottky Rectifier Vishay
Vishay VT3045BP-like datasheet