* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU
* Halogen-free according to IEC 61249-2-21 definition 2 1
VT3045BP Datasheet (171.27 KB)
VT3045BP
171.27 KB
Trench mos barrier schottky rectifier.
VT3045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V.
📁 Related Datasheet
VT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045CBP Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT300 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT300CT Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT3060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
