Part number:
VT3060C
Manufacturer:
File Size:
141.52 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
Datasheet Details
VT3060C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Datasheet Details
VT3060C
141.52 KB
Dual high-voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
VT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT300 Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT300CT Photoconductive Cells and Analog Optoisolators (PerkinElmer Optoelectronics)
VT3045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VT3060C Distributor