* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Not recommended for PCB bottom side wave mounting
* Solder
VT3060G-E3 Datasheet (152.33 KB)
VT3060G-E3
152.33 KB
Dual high voltage trench mos barrier schottky rectifier.
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifi.
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