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VT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VT3060C-M3 Description

www.vishay.com VT3060C-M3, VIT3060C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at.

VT3060C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please

VT3060C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 60 V 170 A 0.57 V 150 °C TO-220AB, TO-262AA Diode variations Common cathode

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Datasheet Details

Part number
VT3060C-M3
Manufacturer
Vishay ↗
File Size
136.09 KB
Datasheet
VT3060C-M3-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
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