* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please
VT3060C-M3 Datasheet (136.09 KB)
VT3060C-M3
136.09 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com
VT3060C-M3, VIT3060C-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at.
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