* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 3
* Halogen-free
VT3045CBP Datasheet (178.75 KB)
VT3045CBP
178.75 KB
Trench mos barrier schottky rectifier.
New Product
VT3045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V a.
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