* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please see www.visha
VT3045C-M3 Datasheet (138.64 KB)
VT3045C-M3
138.64 KB
Dual low-voltage trench mos barrier schottky rectifier.
VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3
www.vishay.com
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier.
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